■ 제품필수정보
제조사 | Infineon |
---|---|
제조사품명 | IGP30N60H3 |
간략설명 | 187W 60A 600V FS (Field Stop) TO-220 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4.1V@0.43mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 1.63nF@25V , Td(off) = 207ns , Gate Charge(Qg) = 165nC@15V , Switching Energy(Eoff) = 440uJ , Turn-On Energy (Eon) = 730uJ , Collector-Emitter Breakdown Voltage (Vces) = 600V , Reverse Recovery Time(trr) = - , Current - Collector(Ic) = 60A , Vce Saturation(VCE(sat)) = 2.4V@30A,15V , Pd - Power Dissipation = 187W , Td(on) = 18ns , IGBT