■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IKD06N65ET6ARMA1 |
| 간략설명 | 31W 9A 650V FS (Field Stop) TO-252-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 1.9V@15V,3A , Operating Temperature = -40℃~+175℃@(Tj) , Input Capacitance(Cies) = - , Td(off) = 35ns , Gate Charge(Qg) = 13.7nC , Switching Energy(Eoff) = 30uJ , Turn-On Energy (Eon) = 60uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 30ns , Current - Collector(Ic) = 9A , Pd - Power Dissipation = 31W , Td(on) = 15ns , IGBT
