■ 제품필수정보
| 제조사 | ST |
|---|---|
| 제조사품명 | STGD10HF60KD |
| 간략설명 | 62.5W 18A 600V DPAK IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = - , Operating Temperature = -55℃~+150℃@(Tj) , Input Capacitance(Cies) = - , Td(off) = 87ns , Gate Charge(Qg) = 23nC , Switching Energy(Eoff) = 105uJ , Turn-On Energy (Eon) = 45uJ , Collector-Emitter Breakdown Voltage (Vces) = 600V , Reverse Recovery Time(trr) = 50ns , Current - Collector(Ic) = 18A , Pd - Power Dissipation = 62.5W , Td(on) = 9.5ns , IGBT
