■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IKP20N65H5 |
| 간략설명 | 125W 42A 650V TO-220-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4V@200uA , Operating Temperature = -40℃~+175℃@(Tj) , Input Capacitance(Cies) = - , Td(off) = 156ns , Gate Charge(Qg) = 48nC@20A,15V , Switching Energy(Eoff) = 60uJ , Turn-On Energy (Eon) = 170uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 52ns , Current - Collector(Ic) = 42A , Vce Saturation(VCE(sat)) = 1.65V@20A,15V , Pd - Power Dissipation = 125W , Td(on) = 18ns , IGBT
