■ 제품필수정보
| 제조사 | HXY MOSFET |
|---|---|
| 제조사품명 | RGS00TS65HRC11-HXY |
| 간략설명 | 250W 80A 650V TO-247 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 3.2V@250uA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 1.916nF@25V , Td(off) = 110ns , Gate Charge(Qg) = 71nC@520V , Switching Energy(Eoff) = 510uJ , Turn-On Energy (Eon) = 1.35mJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 56ns , Current - Collector(Ic) = 80A , Vce Saturation(VCE(sat)) = 2.1V@50A,15V , Pd - Power Dissipation = 250W , Td(on) = 17ns
