■ 제품필수정보
| 제조사 | FUXINSEMI |
|---|---|
| 제조사품명 | IHW20N135R5F |
| 간략설명 | 333W 40A 1.35kV TO-247-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4.8V@1mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 1.781nF@25V , Td(off) = 204ns , Gate Charge(Qg) = 175nC@20A,15V , Switching Energy(Eoff) = - , Turn-On Energy (Eon) = 1.02mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.35kV , Reverse Recovery Time(trr) = - , Current - Collector(Ic) = 40A , Vce Saturation(VCE(sat)) = 1.85V@20A,15V , Pd - Power Dissipation = 333W , Td(on) = - , IGBT
