■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | FP200R12N3T7 |
| 간략설명 | 200A 1.2kV Through Hole,122x62.5mm IGBT Transistors / Modules |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.15V@4.6mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 40.3nF@25V , Td(off) = 351ns , Switching Energy(Eoff) = 12.9mJ , Current - Collector(Ic) = 200A , Vce Saturation(VCE(sat)) = 1.8V@200A,15V , Td(on) = 203ns , Turn-On Energy (Eon) = 25.1mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Voltage - Forward(Vf) = 1.72V@200A
