■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IKB30N65EH5ATMA1 |
| 간략설명 | 188W 55A 650V TO-263-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 3.2V@0.3mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 1.8nF@25V , Td(off) = 159ns , Gate Charge(Qg) = 70nC@30A,15V , Switching Energy(Eoff) = 300uJ , Turn-On Energy (Eon) = 870uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 75ns , Current - Collector(Ic) = 55A , Vce Saturation(VCE(sat)) = 2.1V@30A,15V , Pd - Power Dissipation = 188W , Td(on) = 24ns , Voltage - Forward(Vf) = 1.45V@30A
