■ 제품필수정보
| 제조사 | YANGJIE |
|---|---|
| 제조사품명 | MG35P12E1A |
| 간략설명 | 227W 35A 1.2kV E1A IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.2V@1.2mA , Operating Temperature = -40℃~+150℃ , Input Capacitance(Cies) = 2.5nF@25V , Td(off) = 141ns , Gate Charge(Qg) = 0.27uC , Switching Energy(Eoff) = 1.95mJ , Turn-On Energy (Eon) = 4.45mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Current - Collector(Ic) = 35A , Vce Saturation(VCE(sat)) = 2.35V@35A,15V , Pd - Power Dissipation = 227W , Td(on) = 20ns , Voltage - Forward(Vf) = 1.12V@35A
