■ 제품필수정보
| 제조사 | YANGJIE |
|---|---|
| 제조사품명 | MG40P12E1 |
| 간략설명 | 227W 40A 1.2kV E1 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.2V@1.2mA , Operating Temperature = -40℃~+150℃ , Input Capacitance(Cies) = 2.25nF@25V,0V , Td(off) = 151ns , Gate Charge(Qg) = 0.35uC , Switching Energy(Eoff) = 2.64mJ , Turn-On Energy (Eon) = 3.97mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV , Current - Collector(Ic) = 40A , Vce Saturation(VCE(sat)) = 2.05V@40A,15V , Pd - Power Dissipation = 227W , Td(on) = 31ns , Voltage - Forward(Vf) = 2V@40A
