■ 제품필수정보
| 제조사 | ST |
|---|---|
| 제조사품명 | STGWA50H65DFB2 |
| 간략설명 | 272W 86A 650V TO-247 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5V@1mA , Operating Temperature = -55℃~+175℃ , Input Capacitance(Cies) = 2.928nF@25V , Td(off) = 115ns , Gate Charge(Qg) = 151nC@15V , Switching Energy(Eoff) = 580uJ , Turn-On Energy (Eon) = 910uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 92ns , Current - Collector(Ic) = 86A , Vce Saturation(VCE(sat)) = 2V@50A,15V , Pd - Power Dissipation = 272W , Td(on) = 28ns , Voltage - Forward(Vf) = 2.45V@50A
