■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IGZ100N65H5XKSA1 |
| 간략설명 | 536W 161A 650V TO-247-4 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 3.2V@1mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 6.56nF@25V , Td(off) = 421ns , Gate Charge(Qg) = 210nC@100A,15V , Switching Energy(Eoff) = 770uJ , Current - Collector(Ic) = 161A , Vce Saturation(VCE(sat)) = 2.1V@100A,15V , Pd - Power Dissipation = 536W , Td(on) = 30ns , Turn-On Energy (Eon) = 850uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V
