■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | FZ250R65KE3 |
| 간략설명 | 1000kW 250A 6.5kV Screw Terminals IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.4V@35mA , Operating Temperature = -50℃~+125℃ , Input Capacitance(Cies) = 69nF@25V , Td(off) = 7.3us , Switching Energy(Eoff) = 1.2J , Current - Collector(Ic) = 250A , Vce Saturation(VCE(sat)) = 3.4V@250A,15V , Pd - Power Dissipation = 1000kW , Td(on) = 650ns , Turn-On Energy (Eon) = 1.4J , Collector-Emitter Breakdown Voltage (Vces) = 6.5kV , Voltage - Forward(Vf) = 3V@250A
