■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IGQ120N120S7XKSA1 |
| 간략설명 | 1.004kW 216A 1.2kV TO-247-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 5.1V@2.34mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 17.3nF@25V , Gate Charge(Qg) = 710nC@120A,15V , Switching Energy(Eoff) = 5.72mJ , Current - Collector(Ic) = 216A , Vce Saturation(VCE(sat)) = 2V@120A,15V , Pd - Power Dissipation = 1.004kW , Td(on) = 44ns , Turn-On Energy (Eon) = 10.3mJ , Collector-Emitter Breakdown Voltage (Vces) = 1.2kV
