■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IKD04N60RC2ATMA1 |
| 간략설명 | 36.6W 8A 600V FS (Field Stop) TO-252-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 2.3V@15V,4A , Operating Temperature = -40℃~+175℃@(Tj) , Input Capacitance(Cies) = - , Td(off) = 90ns , Gate Charge(Qg) = 24nC , Switching Energy(Eoff) = 40uJ , Turn-On Energy (Eon) = 100uJ , Collector-Emitter Breakdown Voltage (Vces) = 600V , Reverse Recovery Time(trr) = 80ns , Current - Collector(Ic) = 8A , Pd - Power Dissipation = 36.6W , Td(on) = 4ns , IGBT
