■ 제품필수정보
| 제조사 | Infineon |
|---|---|
| 제조사품명 | IKD03N60RFATMA1 |
| 간략설명 | 53.6W 6.5A 600V FS (Field Stop) TO-252-3 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 4.3V@0.05mA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 200pF@25V , Td(off) = 128ns , Gate Charge(Qg) = 17.1nC@15V , Switching Energy(Eoff) = 40uJ , Turn-On Energy (Eon) = 50uJ , Collector-Emitter Breakdown Voltage (Vces) = 600V , Reverse Recovery Time(trr) = 31ns , Current - Collector(Ic) = 6.5A , Vce Saturation(VCE(sat)) = 2.5V@2.5A,15V , Pd - Power Dissipation = 53.6W , Td(on) = 10ns , IGBT
