■ 제품필수정보
| 제조사 | HXY MOSFET |
|---|---|
| 제조사품명 | IXXH40N65B4H1-HXY |
| 간략설명 | 250W 70A 650V TO-247 IGBT Transistors / Modules ROHS |
■ 제품사양
Gate-Emitter Threshold Voltage (Vge(th)@Ic) = 3.2V@250uA , Operating Temperature = -40℃~+175℃ , Input Capacitance(Cies) = 1.52nF@25V , Td(off) = 136ns , Gate Charge(Qg) = 57nC@15V , Switching Energy(Eoff) = 430uJ , Turn-On Energy (Eon) = 900uJ , Collector-Emitter Breakdown Voltage (Vces) = 650V , Reverse Recovery Time(trr) = 56ns , Current - Collector(Ic) = 70A , Vce Saturation(VCE(sat)) = 2.1V@40A,15V , Pd - Power Dissipation = 250W , Td(on) = 26ns , Voltage - Forward(Vf) = 1.8V@40A
