Channel 타입 = N Maximum Continuous Drain Current = 17 A Maximum Drain Source Voltage = 100 V 패키지 = DPAK (TO-252) 장착형태 = Surface Mount 핀수 = 3 Maximum Drain Source Resistance = 99 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3V Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 34 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V 칩당 요소 수 = 1 최소 작동 온도 = -55 °C N-Channel MOSFET, 100V to 950V, Diodes Inc