Channel 타입 = N Maximum Continuous Drain Current = 5.8 A Maximum Drain Source Voltage = 100 V 패키지 = PowerDI3333-8 장착형태 = Surface Mount 핀수 = 8 Maximum Drain Source Resistance = 99 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3V Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 2.31 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V 칩당 요소 수 = 1 최소 작동 온도 = -55 °C Dual N-Channel MOSFET, Diodes Inc.