■ 제품필수정보

제조사	IXYS
제조사품명	IXYH82N120C3
간략설명	IXYS IXYH82N120C3 IGBT, 200 A 1200 V, 3-Pin TO-247, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 200 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 1.25 kW
패키지 = TO-247
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Switching Speed = 50kHz Transistor Configuration = Single
크기 = 16.26 x 5.3 x 21.46mm
최대 작동 온도 = +175 °C IGBT Discretes, IXYS XPT series. The XPT??range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat) Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage Short circuit capability for 10usec Positive on-state voltage temperature coefficient Optional co-packed Sonic-FRD??or HiPerFRED??diodes International standard and proprietary high voltage packages