■ 제품필수정보

제조사	IXYS
제조사품명	IXTP36N30P
간략설명	N-Channel MOSFET, 36 A, 300 V, 3-Pin TO-220 IXYS IXTP36N30P

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 36 A Maximum Drain Source Voltage = 300 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 110 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5.5V Maximum Power Dissipation = 300 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
시리즈 = HiperFET, Polar N-channel Power MOSFET, IXYS HiperFET??Polar??
시리즈. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET?? from IXYS