■ 제품필수정보

제조사	Vishay
제조사품명	SI4925DDY-T1-GE3
간략설명	Dual P-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC Vishay SI4925DDY-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 8 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 41 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 5 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 2
최소 작동 온도 = -55 °C Dual P-Channel MOSFET, Vishay Semiconductor