상품이미지
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MPN : IXTH34N65X2

N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXYS IXTH34N65X2
  • 브랜드

    IXYS

  • 무원상품코드

    M012723003755

  • 타입별
    TU
  • 주문가능수량

    134

  • 최소주문수량2
  • 판매단위2
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 2개 ~ 8,844원

  • 수량단가2 : 8개 ~ 8,623원

  • 수량단가3 : 16개 ~ 8,497원


총금액
(VAT 별도)
  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 IXYS
제조사품명 IXTH34N65X2
간략설명 N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 IXYS IXTH34N65X2

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 34 A Maximum Drain Source Voltage = 650 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 96 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Minimum Gate Threshold Voltage = 3V Maximum Power Dissipation = 540 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
시리즈 = X2-Class N-channel Power MOSFET, IXYS X2-Class
시리즈. The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control. Very low RDS(on) and QG (gate charge) Intrinsic rectifier diode Low intrinsic gate resistance Low package inductance Industry standard packages

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