■ 제품필수정보

제조사	Infineon
제조사품명	IPP50R190CEXKSA1
간략설명	N-Channel MOSFET, 18.5 A, 550 V, 3-Pin TO-220 Infineon IPP50R190CEXKSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 18.5 A Maximum Drain Source Voltage = 550 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 190 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2.5V Maximum Power Dissipation = 127 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Transistor Material = Si
시리즈 = CoolMOS CE Infineon CoolMOS??CE Power MOSFET