■ 제품필수정보

제조사	Infineon
제조사품명	IPD80R1K0CEATMA1
간략설명	N-Channel MOSFET, 5.7 A, 800 V, 3-Pin DPAK Infineon IPD80R1K0CEATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5.7 A Maximum Drain Source Voltage = 800 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 950 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.9V Minimum Gate Threshold Voltage = 2.1V Maximum Power Dissipation = 83 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
최대 작동 온도 = +150 °C Forward Diode Voltage = 1.2V Infineon CoolMOS??CE Power MOSFET