■ 제품필수정보

제조사	Infineon
제조사품명	SPD08P06PGBTMA1
간략설명	P-Channel MOSFET, 8.83 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 8.83 A Maximum Drain Source Voltage = 60 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 300 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2.1V Maximum Power Dissipation = 42 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 6.22mm
높이 = 2.3mm Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ;sup>® ;/sup> small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant