■ 제품필수정보

제조사	Infineon
제조사품명	BSP149H6327XTSA1
간략설명	N-Channel MOSFET, 660 mA, 200 V Depletion, 3-Pin SOT-223 Infineon BSP149H6327XTSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 660 mA Maximum Drain Source Voltage = 200 V
패키지 = SOT-223
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.8 Ω Channel Mode = Depletion Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 2.1V Maximum Power Dissipation = 1.8 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +150 °C
높이 = 1.6mm Infineon SIPMOS® N-Channel MOSFETs