■ 제품필수정보

제조사	Infineon
제조사품명	BF998E6327HTSA1
간략설명	N-Channel MOSFET Tetrode, 30 mA, 12 V, 4-Pin SOT-143 Infineon BF998E6327HTSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 mA Maximum Drain Source Voltage = 12 V
패키지 = SOT-143
장착형태 = Surface Mount
핀수 = 4 Maximum Gate Threshold Voltage = 2.5V Minimum Gate Threshold Voltage = 0.8V Maximum Power Dissipation = 200 mW Transistor Configuration = Single Maximum Gate Source Voltage = -2.5 V, -2 V
최대 작동 온도 = +150 °C Typical Power
이득 = 28 dB Infineon Dual-gate MOSFET Tetrode. Dual-gate Low noise Tetrode MOSFET RF transistors from Infineon