■ 제품필수정보

제조사	Infineon
제조사품명	BFR182E6327HTSA1
간략설명	Infineon BFR182E6327HTSA1 NPN Transistor, 35 mA, 12 V, 3-Pin SOT-23

■ 제품사양

Transistor
타입 = NPN Maximum DC Collector Current = 35 mA Maximum Collector Emitter Voltage = 12 V
패키지 = SOT-23
장착형태 = Surface Mount Maximum Power Dissipation = 250 mW Transistor Configuration = Single Maximum Collector Base Voltage = 20 V Maximum Emitter Base Voltage = 2 V Maximum Operating Frequency = 8 GHz
핀수 = 3
최대 작동 온도 = +150 °C RF Bipolar Transistors, Infineon