■ 제품필수정보

제조사	Toshiba
제조사품명	TK12J60W,S1VQ(O
간략설명	N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3PN Toshiba TK12J60W,S1VQ(O

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 11.5 A Maximum Drain Source Voltage = 600 V
패키지 = TO-3PN
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 300 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.7V Maximum Power Dissipation = 110 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
시리즈 = TK MOSFET N-Channel, TK1x
시리즈, Toshiba