■ 제품필수정보

제조사	Onsemi
제조사품명	FDG6332C-F085
간략설명	Dual N/P-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 onsemi FDG6332C_F085

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 600 mA, 700 mA Maximum Drain Source Voltage = 20 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 700 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.3V Maximum Power Dissipation = 300 mW Transistor Configuration = Isolated Maximum Gate Source Voltage = -12 V, +12 V
칩당 요소 수 = 2
높이 = 1mm PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.