■ 제품필수정보

제조사	Onsemi
제조사품명	MJ11012G
간략설명	onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA

■ 제품사양

Transistor
타입 = NPN Maximum Continuous Collector Current = 30 A Maximum Collector Emitter Voltage = 60 V Maximum Emitter Base Voltage = 5 V
패키지 = TO-204AA
장착형태 = Through Hole
핀수 = 2 Transistor Configuration = Single
칩당 요소 수 = 2 Minimum DC Current
이득 = 200 Maximum Base Emitter Saturation Voltage = 5 V Maximum Collector Base Voltage = 60 V Maximum Collector Emitter Saturation Voltage = 4 V
높이 = 8.51mm Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. NPN Darlington Transistors, ON Semiconductor