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MPN : SST26VF016B-104I/SM

Microchip 16Mbit Quad-SPI Flash Memory 8-Pin SOIJ, SST26VF016B-104I/SM
  • 브랜드

    Microchip

  • 무원상품코드

    M012246009292

  • 타입별
    PK
  • 주문가능수량

    품 절

  • 최소주문수량5
  • 판매단위5
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 5개 ~ 2,422원

  • 수량단가2 : 25개 ~ 2,374원

  • 수량단가3 : 45개 ~ 2,327원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Microchip
제조사품명 SST26VF016B-104I/SM
간략설명 Microchip 16Mbit Quad-SPI Flash Memory 8-Pin SOIJ, SST26VF016B-104I/SM

■ 제품사양

Memory Size = 16Mbit Interface
타입 = Quad-SPI
패키지 = SOIJ
핀수 = 8 Organisation = 2M x 8 bit
장착형태 = Surface Mount Cell
타입 = Split Gate Minimum Operating Supply Voltage = 2.7 V Maximum Operating Supply Voltage = 3.6 V Block Organisation = Symmetrical Length = 5.26mm
높이 = 1.98mm Width = 5.25mm
크기 = 5.26 x 5.25 x 1.98mm Maximum Random Access Time = 8ns SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory. The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O??(SQI?? interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip ??s SQI??interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms. Features. Serial Interface Architecture ??Nibble-Wide Multiplexed I/O ??s with SPI-like Serial Command Structure x1/x2/x4 Serial Peripheral Interface (SPI) Protocol High Speed Clock Frequency- 104 MHz Max Burst Modes Low Power Consumption ??Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical) Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical) Flexible Erase Capability Software Write Protection

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