■ 제품필수정보

제조사	STMicroelectronics
제조사품명	STGWT80H65DFB
간략설명	STMicroelectronics STGWT80H65DFB IGBT, 120 A 650 V, 3-Pin TO-3P, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 120 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 469 W
패키지 = TO-3P
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Switching Speed = 1MHz Transistor Configuration = Single
크기 = 15.8 x 5 x 20.1mm
최소 작동 온도 = -55 °C IGBT Discretes, STMicroelectronics