■ 제품필수정보

제조사	Infineon
제조사품명	IRF8313TRPBF
간략설명	Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC Infineon IRF8313TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9.7 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 21.6 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.35V Minimum Gate Threshold Voltage = 1.35V Maximum Power Dissipation = 2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +175 °C
높이 = 1.5mm N-Channel Power MOSFET 30V, Infineon. The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.