■ 제품필수정보

제조사	Infineon
제조사품명	IGB10N60TATMA1
간략설명	Infineon IGB10N60TATMA1 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

■ 제품사양

Maximum Continuous Collector Current = 10 A Maximum Collector Emitter Voltage = 600 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 110 W
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount Channel
타입 = N
핀수 = 3 Switching Speed = 1MHz Transistor Configuration = Single
크기 = 10.31 x 9.45 x 4.57mm
최소 작동 온도 = -40 °C Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop??technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C