■ 제품필수정보
제조사 |
Infineon |
제조사품명 |
IRF7309TRPBF |
간략설명 |
Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309TRPBF |
■ 제품사양
Channel
타입 = N, P Maximum Continuous Drain Current = 3 A, 4 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 80 mΩ, 160 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 1V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 1.4 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 2
시리즈 = HEXFET Dual N/P-Channel Power MOSFET, Infineon. Infineon ??s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.