■ 제품필수정보

제조사	Infineon
제조사품명	IPB027N10N3GATMA1
간략설명	N-Channel MOSFET, 120 A, 100 V, 3-Pin D2PAK Infineon IPB027N10N3GATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 120 A Maximum Drain Source Voltage = 100 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 4.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 300 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
높이 = 4.57mm Infineon OptiMOS?? Power MOSFETs, 100V and over