■ 제품필수정보

제조사	Infineon
제조사품명	BSC22DN20NS3GATMA1
간략설명	N-Channel MOSFET, 7 A, 200 V, 8-Pin TDSON Infineon BSC22DN20NS3GATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 7 A Maximum Drain Source Voltage = 200 V
패키지 = TDSON
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 225 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 34 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Transistor Material = Si
높이 = 1.1mm Infineon OptiMOS?? Power MOSFETs, 100V and over