■ 제품필수정보

제조사	Infineon
제조사품명	SPP15P10PLHXKSA1
간략설명	P-Channel MOSFET, 11.3 A, 100 V, 3-Pin TO-220 Infineon SPP15P10PLHXKSA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 11.3 A Maximum Drain Source Voltage = 100 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 270 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 128 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
시리즈 = SIPMOS Infineon SIPMOS® P-Channel MOSFETs. The Infineon SIPMOS ;sup>® ;/sup> small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.. · AEC Q101 Qualified (Please refer to datasheet) · Pb-free lead plating, RoHS compliant