■ 제품필수정보

제조사	Infineon
제조사품명	IPP80P03P4L04AKSA1
간략설명	P-Channel MOSFET, 80 A, 30 V, 3-Pin TO-220 Infineon IPP80P03P4L04AKSA1

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 80 A Maximum Drain Source Voltage = 30 V
패키지 = TO-220
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 7 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 137 W Transistor Configuration = Single Maximum Gate Source Voltage = -16 V, +5 V
최대 작동 온도 = +175 °C
최소 작동 온도 = -55 °C Infineon OptiMOS??P P-Channel Power MOSFETs. The Infineon OptiMOS ??P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS??P-Channel
시리즈: Temperature range from -55°C to +175°C