■ 제품필수정보

제조사	Vishay
제조사품명	SQ4431EY-T1_GE3
간략설명	P-Channel MOSFET, 6.2 A, 30 V, 8-Pin SOIC Vishay SQ4431EY-T1_GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 6.2 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 52 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 6 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Transistor Material = Si
시리즈 = SQ Rugged P-Channel MOSFET, SQ Rugged
시리즈, Vishay Semiconductor