■ 제품필수정보

제조사	Vishay
제조사품명	SI7900AEDN-T1-GE3
간략설명	Dual N-Channel MOSFET, 6 A, 20 V, 8-Pin PowerPAK 1212-8 Vishay SI7900AEDN-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 6 A Maximum Drain Source Voltage = 20 V
패키지 = PowerPAK 1212-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 36 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 1.5 W Transistor Configuration = Common Drain Maximum Gate Source Voltage = -12 V, +12 V
칩당 요소 수 = 2
최소 작동 온도 = -55 °C Dual N-Channel MOSFET, Vishay Semiconductor