■ 제품필수정보

제조사	Vishay
제조사품명	SIHF640L-GE3
간략설명	N-Channel MOSFET, 18 A, 200 V, 3-Pin I2PAK Vishay SIHF640L-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 18 A Maximum Drain Source Voltage = 200 V
패키지 = I2PAK (TO-262)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 180 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 130 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Width = 4.83mm
최소 작동 온도 = -55 °C N-Channel MOSFET, 200V to 250V, Vishay Semiconductor