■ 제품필수정보

제조사	Vishay
제조사품명	SISS27DN-T1-GE3
간략설명	P-Channel MOSFET, 23 A, 30 V, 8-Pin PowerPAK 1212-8 Vishay SISS27DN-T1-GE3

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 23 A Maximum Drain Source Voltage = 30 V
패키지 = PowerPAK 1212-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 9 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 57 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
시리즈 = TrenchFET P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor