■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIA906EDJ-T1-GE3 |
| 간략설명 |
N-Channel MOSFET, 4.5 A, 20 V, 6-Pin SOT-363 (SC-70) Vishay SIA906EDJ-T1-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 4.5 A Maximum Drain Source Voltage = 20 V
패키지 = SOT-363 (SC-70)
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 63 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.6V Maximum Power Dissipation = 7.8 W Transistor Configuration = Single Maximum Gate Source Voltage = -12 V, +12 V Transistor Material = Si
최소 작동 온도 = -55 °C N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
