■ 제품필수정보

제조사	Vishay
제조사품명	SI4599DY-T1-GE3
간략설명	Dual N/P-Channel MOSFET, 4.7 A, 6.8 A, 40 V, 8-Pin SOIC Vishay SI4599DY-T1-GE3

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 4.7 A, 6.8 A Maximum Drain Source Voltage = 40 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 42.5 mΩ, 62 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 3 W, 3.1 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
최대 작동 온도 = +150 °C
높이 = 1.55mm Dual N/P-Channel MOSFET, Vishay Semiconductor