■ 제품필수정보
■ 제품사양
Channel
타입 = N, P Maximum Continuous Drain Current = 7.2 A, 8 A Maximum Drain Source Voltage = 40 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 20 mΩ, 28 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.8V Maximum Power Dissipation = 3.1 W, 3.2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, -16 V, +16 V, +20 V
칩당 요소 수 = 2
최소 작동 온도 = -55 °C Dual N/P-Channel MOSFET, Vishay Semiconductor