■ 제품필수정보

제조사	Vishay
제조사품명	SI1922EDH-T1-GE3
간략설명	Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 1.3 A Maximum Drain Source Voltage = 20 V
패키지 = SOT-363
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 263 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 1.25 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -8 V, +8 V Transistor Material = Si
최소 작동 온도 = -55 °C Dual N-Channel MOSFET, Vishay Semiconductor