■ 제품필수정보

제조사	Onsemi
제조사품명	FDS8958B
간략설명	Dual N/P-Channel MOSFET, 4.5 A, 6.4 A, 30 V, 8-Pin SOIC ON Semiconductor FDS8958B

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 4.5 A, 6.4 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 39 mΩ, 80 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 1.6 W, 2 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -25 V, -20 V, +20 V, +25 V Width = 3.9mm
높이 = 1.575mm PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.